前苏联专利SU1213994A3 Method of manufacturing photosensitive instruments

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专利摘要:
An amorphous silicon capable of the formation of a semiconductor junction. The amorphous silicon can be fabricated by a glow discharge in a gas atmosphere including hydrogen and a deposition gas. The deposition gas has therein the elements silicon and a halogen selected from the group consisting of chlorine, bromine and iodine.
公开号:SU1213994A3
申请号:SU772524783
申请日:1977-09-27
公开日:1986-02-23
发明作者:Эмил Карлсон Дэвид
申请人:Рка Корпорейшн (Фирма)；
IPC主号:

专利说明:

The invention relates to the manufacture of semiconductor devices, in particular, to methods for making photosensitive devices.
The purpose of the invention is to reduce the cost of manufacturing technology while maintaining the electrophysical parameters of the devices.
The atmosphere, containing hydrogen and a silicon-containing substance in the gas phase with halogen elements selected from the group containing chlorine, bromine and iodine, is introduced into the vacuum chamber under a pressure of 0.1-5.0 Torr. In this case, dichlorosilane SiHjCl, is selected as the silicon-containing substance of the general formula.
1213994Z
As a result of the introduction of the atmosphere of hydrogen and dichlorosilane, the temperature of the substrate rises to 200-500 ° C, since additional heat is now radiated to the substrate through the gas atmosphere. When the volume ratio of hydrogen and silicon-containing 1st substance is 2: 1 or more, the quality of the amorphous layer can be the highest. However, at very high ratios, e.g. 40: 1, the deposition rate becomes very low, on the order of 1 µm / h.
To establish a glow gap - 5 between the electrode and the substrate
the power source is turned on, due to which the deposition of an amorphous silicon layer begins, and the density of
The substrate should be 20 in the range of 0.1–3.0 mA / cm.
The substrate should be 20 in the range of 0.1–3.0 mA / cm.

权利要求:
Claims (1)
[1]
METHOD FOR PRODUCING PHOTOSENSITIVE DEVICES, including the manufacture of sensitive elements in the form of a p-η or pin structure or in the form of a structure with a Schottky barrier based on hydrogenated silicon during its deposition by the method of silicon hydrogen glow discharge in a hydrogen-containing medium at a pressure of 0.1 - 5 torr and a temperature of 150 ° C - 450 ° C, while a silicon-containing substance in the gas phase is used as a silicon source, characterized in that, in order to reduce the cost of manufacturing technology while maintaining varying the electrophysical parameters of devices, structures are made on the basis of hydrogenated silicon doped with halogen, while a compound of the general formula where X is halogen is used as a silicon-containing substance in the gas phase;
η 4, with a ratio of hydrogen and this compound (2: 1) - (40: 1).
>
ί 1213994

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法律状态:

优先权:

申请号 | 申请日 | 专利标题

US05/727,659|US4196438A|1976-09-29|1976-09-29|Article and device having an amorphous silicon containing a halogen and method of fabrication|

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